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| ISL9R860PF2 April 2003 ISL9R860PF2 8A, 600V StealthTM Diode General Description The ISL9R860PF2 is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49409. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns * * * * Operating Temperature. . . . . . . . . . . . . . . . . . 150oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package TO-220F Symbol K A CATHODE ANODE Device Maximum Ratings TC= 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 75oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Ratings 600 600 600 8 16 100 26 20 -55 to 150 300 Units V V V A A A W mJ C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A ISL9R860PF2 Package Marking and Ordering Information Device Marking R860PF2 Device ISL9R860PF2 Package TO-220F Tape Width N/A Quantity 50 Units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25C TC = 125C 2.0 1.6 2.4 2.0 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 30 pF Switching Characteristics trr trr IRRM QRR trr S IRRM QRR trr S IRRM QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 8A, dIF/dt = 100A/s, VR = 30V IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, TC = 125C 18 21 28 3.2 50 77 3.7 3.4 150 53 2.5 6.5 195 500 25 30 A nC A/s A nC ns ns ns ns A nC ns Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220F 4.8 70 C/W C/W (c)2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A ISL9R860PF2 Typical Performance Curves 16 14 IF, FORWARD CURRENT (A) 12 10 8 100oC 6 4 2 0 0.1 100 175oC 150oC 25oC 125oC IR, REVERSE CURRENT (A) 100 175oC 150oC 10 125oC 100oC 1 25oC 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 80 VR = 390V, TJ = 125C 70 tb AT dIF/dt = 200A/s, 500A/s, 800A/s t, RECOVERY TIMES (ns) 60 t, RECOVERY TIMES (ns) 50 40 30 20 10 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 0 0 2 4 6 8 10 12 14 16 IF, FORWARD CURRENT (A) Figure 2. Reverse Current vs Reverse Voltage 90 VR = 390V, TJ = 125C 80 70 60 50 40 30 20 10 ta AT IF = 16A, 8A, 4A 0 100 200 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1000 tb AT IF = 16A, 8A, 4A Figure 3. ta and tb Curves vs Forward Current IRRM , MAX REVERSE RECOVERY CURRENT (A) 11 VR = 390V, TJ = 125C 10 9 8 7 6 5 dIF/dt = 200A/s 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 dIF/dt = 500A/s IRRM , MAX REVERSE RECOVERY CURRENT (A) 14 Figure 4. ta and tb Curves vs dIF/dt dIF/dt = 800A/s VR = 390V, TJ = 125C 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/s) IF = 8A IF = 16A IF = 4A Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF/dt (c)2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A ISL9R860PF2 Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125C 5 350 VR = 390V, TJ = 125C 300 IF = 16A 250 4 IF = 16A IF = 8A 200 IF = 8A 3 150 IF = 4A 100 2 IF = 4A 1 100 200 300 400 500 600 700 800 900 1000 50 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1200 Figure 8. Reverse Recovery Charge vs dIF/dt 10 CJ , JUNCTION CAPACITANCE (pF) 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 8 800 6 600 4 400 2 200 0 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) 50 75 100 125 150 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage 2.0 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 10. DC Current Derating Curve THERMAL IMPEDANCE ZJA, NORMALIZED 0.1 PDM t1 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA t2 SINGLE PULSE 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance (c)2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A ISL9R860PF2 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 MOSFET Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 R + IL VDD DUT t0 t1 t2 t IV IL VAVL Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms (c)2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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